STB31L01 Datasheet, PDF (3/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STB31L01
40
V GS =10V
32
V GS =6V
24
V GS =5V
16
8
V GS =4V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
120
100
80
60
V GS =10V
40
20
1
1
8
16
24
32
40
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.1
25
20
Tj = 125 C
15
-55 C
10
25 C
5
0
0 0.8 1.6 2.4 3.2 4.0 4.8
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.2
2.0
1.8
V G S =10V
ID=13A
1.6
1.4
1.2
1.0
0
0
25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Sep,20,2012
3
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