STB31L01 Datasheet, PDF (2/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STB31L01
Ver 1.1
ELECTRICAL CHARACTERISTICS (TC=25^°C unless otherwise noted⁾
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
100
IDSS
Zero Gate Voltage Drain Current
VDS=80V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=250uA
1
RDS(ON)
g_FS
Drain-Source On-State Resistance
Forward Transconductance
VGS=10V , ID=13A
VDS=10V , ID=13A
DYNAMIC CHARACTERISTICS ^b
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS ^b
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=13A,VGS=10V
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=50V,ID=13A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=4A
Notes
a.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25^°C,L=0.5mH,VDD=50V.(See Figure13)
Typ Max Units
V
1
uA
±100 nA
2.0
3
V
49 60 m ohm
22
S
1460
pF
88
pF
75
pF
25
ns
23
ns
66
ns
14
ns
26
nC
2.6
nC
9.3
nC
0.79 1.3 V
Sep,20,2012
2
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