SP4401 Datasheet, PDF (4/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SP4401
36
ID = -4A
30
24
18
125 C
12
75 C
25 C
6
0
0
2
4
6
8
10
-VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
4000
Ciss
3500
3000
2500
2000
1500
1000
Coss
500
Crss
0
0
5 10 15 20 25 30
-VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 1.0
20.0
10.0
5.0
25 C
125 C
75 C
1.0
0
0.3
0.6
0.9
1.2
1.5
-VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8
VDS = -15V
ID = -4A
6
4
2
0
0 8 16 24 32 40 48 56 64
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
1000
100
TD(on)
Tr
Tf
10
TD(off )
VDS=-15V,ID=-1A
VGS=-10V
1
1
10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
100
10
R ^{DS(ON) Limit}
100us
1ms
1¹_s^00ms
10s
1
DC
VGS = -10V
0.1 _{Single Pulse}
TA = 25 C
0.03
0.1
1
10 30
-VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Jan,29,2014
4
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