SP4401 Datasheet, PDF (2/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SP4401
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-30
IDSS
Zero Gate Voltage Drain Current
VDS=-24V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=-250uA
-1.0
RDS(ON)
g_FS
Drain-Source On-State Resistance
Forward Transconductance
VGS=-10V , ID=-4A
VGS=-4.5V , ID=-3A
VDS=-10V , ID=-4A
DYNAMIC CHARACTERISTICS ^b
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=-15V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS ^b
tD(ON)
tr
tD(OFF)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=-15V
ID=-1A
VGS=-10V
RGEN= 6 ohm
VDS=-15V,ID=-4A,VGS=-10V
VDS=-15V,ID=-4A,VGS=-4.5V
VDS=-15V,ID=-4A,
VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
VGS=0V,IS=-1A
Typ
-1.6
10
13
24
3545
394
289
58
50
176
45
59
28
5
14
-0.8
Max Units
V
-1
uA
±10 uA
-3.0 V
12.5 m ohm
18 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
-1.2 V
Notes
a.Surface Mounted on FR4 Board of 1 inch² , 1oz.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25^°C,L=0.5mH,VDD = 20V.(See Figure13)
Jan,29,2014
2
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