SP4401 Datasheet, PDF (3/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SP4401
Ver 1.0
100
VGS = -10V
80 VGS = -4.5V
60
40
VGS = -4V
VGS = -3.5V
VGS = -3V
20
VGS = -2.5V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
-VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
30
25
20
15
VGS = -4.5V
10
VGS = -10V
5
1
1
20 40
60
80 100
-ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
30
24
18
12
Tj=125 C
6
25 C
-55 C
0
0 0.5 1.0 1.5 2.0 2.5 3.0
-VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
1.5
VGS = -10V
1.4
ID = -4A
1.3
1.2
VGS = -4.5V
ID = -3A
1.1
1.0
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
VDS = VGS
ID = -250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
3
1.15
ID = -250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Jan,29,2014
www.samhop.com.tw