SP3900 Datasheet, PDF (4/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SP3900
120
I D =2 . 2 5 A
100
80
125 C
60
40
75 C 25 C
20
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
600
500
Ciss
400
300
200
100
0
0
Coss
Crss
5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
20
10
125 C
25 C
75 C
Ver 1.1
1
0
0.3
0.6 0.9
1.2 1.5
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS=15V
8
ID=2.25A
6
4
2
0
0
1
2
3
4
5
6
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
100
10
TD(off )
Tf
Tr
TD(on)
100
10
R ^{DS(ON) Limit}
1ms
1
11s001m0sms
DC
VDS=15V,ID=1A
VGS=10V
1
1
6 10
60 100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
0.1
0.01
0.1
VGS=10V
Single Pulse
TC=25 C
1
10
100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Jan,23,2014
4
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