SP3900 Datasheet, PDF (3/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SP3900
10
VGS=10V
8
VGS=4.5V
6
VGS=4V
4
VGS=3.5V
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
120
100
80
V GS =4.5V
60
40
V GS =10V
20
0
1
2
4
6
8
10
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.1
20
16
12
8
Tj=125 C -55 C
4
25 C
0
0
1
2
3
4
5
6
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.2
2.0
1.8
1.6
V G S =10V
I D =2 . 2 5 A
1.4
1.2
1.0
V G S =4.5V
I D =1 . 7 A
0
0 25 50 75 100 125 150
Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Jan,23,2014
3
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