RUS1Z20R2 Datasheet, PDF (4/6 Pages) Ruichips Semiconductor Co., Ltd – Power Schottky Barrier Diode

℃
RUS1Z20R2
Typical Characteristics
Power Derating
30
25
DC
20
15
10
5
0
0 20 40 60 80 100 120 140 160
T_C - Case Temperature (°C)
Forward Voltage
100
10
T_J=125°C
1
T_J=25°C
10000
1000
100
10
0.1
1000
100
10
1
Junction Capacitance
F=1mHz
1
10
100
1000
V_R – Reverse Voltage (V)
Reverse Current
T_J=125°C
T_J=25°C
0.1
0
0.2 0.4 0.6 0.8
1
1.2
V_F - Forward Voltage (V)
0.1
0
30
60
90
120
150
V_R - Reverse Voltage
Thermal Transient Impedance
10
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
1
0.1
0.01
0.001
1E-05
Single Pulse
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (sec)
R_θJC=1.5°C/W
1
10
Ruichips Semiconductor Co., Ltd
Rev. A– JAN., 2013
4
www.ruichips.com