RUS1Z20R2 Datasheet, PDF (2/6 Pages) Ruichips Semiconductor Co., Ltd – Power Schottky Barrier Diode

RUS1Z20R2
Electrical Characteristics (T_C=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RUS1Z20R2
Unit
Min. Typ. Max.
Static Characteristics
I_R^① Reverse Leakage Current
V_R=150V, T_C=25°C
V_R=150V, T_C=125°C
100
µA
5
mA
I_F=5A, T_C=25°C
0.75
-
V
V_F^① Forward Voltage Drop
I_F=5A, T_C=125°C
I_F=10A, T_C=25°C
0.65
-
V
0.85 0.9
V
I_F=10A, T_C=125°C
0.75 0.8
V
Notes: ^{①Pulse test, pulse width≤300µs, duty cycle≤2%.}
Ruichips Semiconductor Co., Ltd
Rev. A– JAN., 2013
2
www.ruichips.com