RUS1Z20R2 Datasheet, PDF (1/6 Pages) Ruichips Semiconductor Co., Ltd – Power Schottky Barrier Diode

Features
• V_RRM= 150V
I_F(AV)=2x 10A
• Low Power Loss and High Efficiency
• High Surge Capability
• Low Leakage Current
• Low Forward Voltage Drop
• Lead Free and Green Devices Available
Applications
• Rectifiers in SMPS
• Free Wheeling Diode
• DC-DC Converters
RUS1Z20R2
Power Schottky Barrier Diode
Pin Description
TO220
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (T_C=25°C Unless Otherwise Noted)
V_RRM
V_R
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
I_F(AV)
per Device
Average Rectified Forward Current, T_C=130°C
per Diode
I_FSM
T_STG
T_J
Peak Forward Surge Current,8.3ms Half Sine Wave
Storage Temperature Range
Operating Junction Temperature
Mounted on Large Heat Sink
R_θJC
Thermal Resistance-Junction to Case
R_θJA
Thermal Resistance-Junction to Ambient
Schottky Barrier Diode
Rating
Unit
150
V
150
V
20
A
10
A
150
A
-55 to 150 °C
150
°C
1.5
°C/W
62.5
°C/W
Ruichips Semiconductor Co., Ltd
Rev. A– JAN., 2013
1
www.ruichips.com