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| SCT3030KL Datasheet, PDF (9/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT3030KL
ï¬Electrical characteristic curves
Datasheet
Fig.15 Typical Capacitance
vs. Drain - Source Voltage
10000
Ciss
1000
Coss
100
Crss
10
Ta = 25ºC
f = 1MHz
VGS = 0V
1
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Fig.16 Coss Stored Energy
50
45
Ta = 25ºC
40
35
30
25
20
15
10
5
0
0
200
400
600
800
Drain - Source Voltage : VDS [V]
Fig.17 Switching Characteristics
10000
tf
1000
Ta = 25ºC
VDD = 400V
VGS = 18V
RG = 0ï
Pulsed
100 td(off)
10
tr
td(on)
Fig.18 Dynamic Input Characteristics
20
Ta = 25ºC
VDD = 600V
15
ID = 27A
Pulsed
10
5
1
0.1
1
10
100
Drain Current : ID [A]
0
0 20 40 60 80 100 120 140
Total Gate Charge : Qg [nC]
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© 2016 ROHM Co., Ltd. All rights reserved.
9/12
2017.08 - Rev.C
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