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| SCT3030KL Datasheet, PDF (10/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT3030KL
ï¬Electrical characteristic curves
Datasheet
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
1000
900
Ta = 25ºC
ID=27A
800
VGS = 18V/0V
700
RG=0ï
L=250ïH
Eon
600
500
400
300
Eoff
200
100
0
200
400
600
800
1000
Drain - Source Voltage : VDS [V]
Fig.20 Typical Switching Loss
vs. Drain Current
4000
3600
3200
2800
Ta = 25ºC
VDD=600V
VGS = 18V/0V
RG=0ï
L=250ïH
2400
2000
1600
Eon
1200
800
400
0
0 10 20 30 40 50
Eoff
60 70
Drain Current : ID [A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
4000
3600
3200
2800
2400
Ta = 25ºC
VDD=600V
ID=27A
VGS = 18V/0V
L=250ïH
2000
1600
Eon
1200
800
Eoff
400
0
0
5 10 15 20 25 30
External Gate Resistance : RG [ï]
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© 2016 ROHM Co., Ltd. All rights reserved.
10/12
2017.08 - Rev.C
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