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SCT3030KL Datasheet, PDF (2/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT3030KL
ï¬Thermal resistance
Parameter
Thermal resistance, junction - case
Datasheet
Symbol
RthJC
Values
Unit
Min. Typ. Max.
-
0.34 0.44 ï°C/W
ï¬Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
1200
-
-
V
Zero gate voltage
drain current
Gate - Source leakage current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate input resistance
VDS = 1200V, VGS = 0V
IDSS Tj = 25°C
-
Tj = 150°C
-
IGSSï« VGS = ï«22V, VDS = 0V
-
IGSSï VGS = ï4V, VDS = 0V
-
VGS (th) VDS = 10V, ID = 13.3mA 2.7
VGS = 18V, ID = 27A
RDS(on) *3 Tj = 25°C
-
Tj = 125°C
-
RG f = 1MHz, open drain
-
1
10
ïA
2
-
-
100 nA
-
ï100 nA
-
5.6
V
30
39 mï
45
-
5
-
ï
ï¬Example of acceptable Vgs waveform
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2/12
2017.08 - Rev.C
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