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SCT3022AL Datasheet, PDF (8/14 Pages) Rohm – N-channel SiC power MOSFET
SCT3022AL
Electrical characteristic curves
Datasheet
Fig.12 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
0.09
0.08
Ta = 25ºC
Pulsed
0.07
0.06
0.05
0.04
0.03
ID = 36A
ID = 62A
0.02
0.01
0
6 8 10 12 14 16 18 20 22
Gate - Source Voltage : VGS [V]
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
0.09
0.08
VGS = 18V
Pulsed
0.07
0.06
0.05
0.04
0.03
ID = 62A
0.02
ID = 36A
0.01
0
-50
0
50 100 150 200
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current
0.1
Ta = 150ºC
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
VGS = 18V
Pulsed
0.01
1
10
100
Drain Current : ID [A]
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2017.08 - Rev.C