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| SCT3022AL Datasheet, PDF (10/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT3022AL
ï¬Electrical characteristic curves
Datasheet
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
500
450 Ta = 25ºC
ID=36A
400
VGS = 18V/0V
350
RG=0ï
L=100ïH
Eon
300
250
200
150
Eoff
100
50
0
100
200
300
400
500
Drain - Source Voltage : VDS [V]
Fig.20 Typical Switching Loss
vs. Drain Current
2000
1800
1600
1400
Ta = 25ºC
VDD=300V
VGS = 18V/0V
RG=0ï
L=100ïH
1200
1000
Eon
800
600
400
Eoff
200
0
0
20
40
60
80 100
Drain Current : ID [A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
2000
1800
1600
1400
1200
Ta = 25ºC
VDD=300V
ID=36A
VGS = 18V/0V
L=100ïH
1000
Eon
800
600
Eoff
400
200
0
0
5 10 15 20 25 30
External Gate Resistance : RG [ï]
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© 2016 ROHM Co., Ltd. All rights reserved.
10/12
2017.08 - Rev.C
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