SCT3022AL Datasheet, PDF (1/14 Pages) Rohm – N-channel SiC power MOSFET

SCT3022AL
N-channel SiC power MOSFET
Datasheet
V_DSS
R_DS(on) (Typ.)
I_D
P_D
650V
22m
93A
339W
Features
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
Application
・Solar inverters
・DC/DC converters
・Switch mode power supplies
・Induction heating
・Motor drives
Outline
TO-247N
Inner circuit
(1)(2)(3)
(2)
(1) Gate
(2) Drain
*1 (3) Source
(1)
*1 Body Diode
(3)
Packaging specifications
Packing
Tube
Reel size (mm)
-
Tape width (mm)
-
Type
Basic ordering unit (pcs)
30
Taping code
C11
Marking
SCT3022AL
Absolute maximum ratings (T_a = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
T_c = 25°C
T_c = 100°C
Pulsed drain current
Gate - Source voltage
Gate-Source Surge Voltage
Recommended Drive Voltage
Junction temperature
Range of storage temperature
Symbol
V_DSS
I_D ^*1
I_D ^*1
I_D,pulse ^*2
V_GSS
V_{GSS_surge}
V_{GS_op}
T_j
T_stg
Value
650
93
65
232
4 to 22
4 to 22
0 / 18
175
55 to 175
Unit
V
A
A
A
V
V
V
°C
°C
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2017.08 - Rev.C