SH8M11 Datasheet, PDF (6/11 Pages) Rohm – 4V Drive Nch + Pch MOSFET

SH8M11
　
Data Sheet
1000
100
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
C_oss
C_iss
C_rss
10
Ta=25°C
f=1MHz
V_GS=0V
1
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : V_DS[V]
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
10
Fig.14 Maximum Safe Operating Aera
100
Operation in this area is limited by R_DS(ON)
(V_GS=10V)
10
P_W=100us
1
P_W=1ms
0.1
Ta = 25°C
Single Pulse : 1Unit
MOUNTED ON CERAMIC BOARD
0.01
0.1
1
10
P_W = 10ms
DC operation
100
DRAIN-SOURCE VOLTAGE : V_DS[V]
1
0.1
0.01
0.001
0.0001
Ta = 25°C
Single Pulse : 1Unit
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 89.3 °C/W
<Mounted on a CERAMIC board>
0.01
1
100
PULSE WIDTH : Pw(s)
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2011.10 - Rev.A