SH8M11 Datasheet, PDF (3/11 Pages) Rohm – 4V Drive Nch + Pch MOSFET

SH8M11
 Electrical characteristics (Ta = 25C)
<Tr2(Pch)>
Parameter
Symbol
Gate-source leakage
I_GSS
Drain-source breakdown voltage V _(BR)DSS
Zero gate voltage drain current
I_DSS
Gate threshold voltage
V_{GS (th)}
Static drain-source on-state
resistance
R_DS
*
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Y_fs l *
C_iss
C_oss
C_rss
t_d(on)*
t_{r *}
t_d(off)*
t_f *
Q_g *
Q_gs *
Q_{gd *}
Min.
-
30
1.0
-
-
-
2.5
-
-
-
-
-
-
-
-
-
-
　
Typ.
-
-
-
-
70
100
110
-
410
55
55
9
18
35
12
4.2
1.7
1.1
Max.
10
-
1
2.5
98
140
155
-
-
-
-
-
-
-
-
-
-
-
Unit
Conditions
A V_GS=20V, V_DS=0V
V I_D=1mA, V_GS=0V
A V_DS=30V, V_GS=0V
V V_DS=10V, I_D=1mA
I_D=3.5A, V_GS=10V
m I_D=1.7A, V_GS=4.5V
I_D=1.7A, V_GS=4.0V
S V_DS=10V, I_D=3.5A
pF V_DS=10V
pF V_GS=0V
pF f=1MHz
ns I_D=1.7A, V_DD 15V
ns V_GS=10V
ns R_L=8.8
ns R_G=10
nC I_D=3.5A, V_DD 15V
nC V_GS=5V
nC
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward Voltage
V_SD *
-
-
*Pulsed
Max.
1.2
Unit
Conditions
V I_s=3.5A, V_GS=0V
Data Sheet
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3/10
2011.10 - Rev.A