SH8M11 Datasheet, PDF (2/11 Pages) Rohm – 4V Drive Nch + Pch MOSFET

SH8M11
 Electrical characteristics (Ta = 25C)
<Tr1(Nch)>
Parameter
Symbol Min.
Gate-source leakage
I_GSS
-
Drain-source breakdown voltage V _(BR)DSS 30
Zero gate voltage drain current
I_DSS
-
Gate threshold voltage
V_{GS (th)}
1.0
Static drain-source on-state
resistance
-
R_DS
*
(on)
-
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Y_fs l * 1.5
C_iss
-
C_oss
-
C_rss
-
t_d(on) *
-
t_r *
-
t_d(off) *
-
t_f *
-
Q_g *
-
Q_gs *
-
Q_{gd *}
-
　
Typ.
-
-
-
-
70
90
100
-
85
40
20
4
8
18
3
1.9
0.8
0.4
Max.
10
-
1
2.5
98
126
140
-
-
-
-
-
-
-
-
-
-
-
Unit
Conditions
A V_GS=±20V, V_DS=0V
V I_D=1mA, V_GS=0V
A V_DS=30V, V_GS=0V
V V_DS=10V, I_D=1mA
I_D=3.5A, V_GS=10V
m I_D=3.5A, V_GS=4.5V
I_D=3.5A, V_GS=4V
S V_DS=10V, I_D=3.5A
pF V_DS=10V
pF V_GS=0V
pF f=1MHz
ns I_D=1.7A, V_DD 15V
ns V_GS=10V
ns R_L=8.8
ns R_G=10
nC I_D=3.5A, V_DD 15V
nC V_GS=5V
nC
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward Voltage
V_SD *
-
-
*Pulsed
Max.
1.2
Unit
Conditions
V I_s=3.5A, V_GS=0V
Data Sheet
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2/10
2011.10 - Rev.A