SCT2H12NZ Datasheet, PDF (6/14 Pages) Rohm – N-channel SiC power MOSFET

SCT2H12NZ
Electrical characteristic curves
Fig.4 Typical Output Characteristics(I)
3.5
V_GS= 20V
3 V_GS= 18V
2.5
2
1.5
V_GS= 16V
V_GS= 14V
T_a = 25ºC
Pulsed
V_GS= 12V
1
V_GS= 10V
0.5
0
V_GS= 8V
0
2
4
6
8
10
Drain - Source Voltage : V_DS [V]
Datasheet
Fig.5 Typical Output Characteristics(II)
1.8
V_GS= 20V
1.6 _{VGS= 18V}
1.4 ^VGS^{= 16V}
1.2
1
0.8
0.6
0.4
0.2
0
0
1
2
V_GS= 14V
V_GS= 12V
T_a = 25ºC
Pulsed
V_GS= 10V
V_GS= 8V
3
4
5
Drain - Source Voltage : V_DS [V]
Fig.6 T_j = 150°C Typical Output
Characteristics(I)
3.5
3
V_GS= 20V
2.5
V_GS= 18V
2
V_GS= 16V
V_GS= 14V
1.5
V_GS= 12V
V_GS = 10V
1
V_GS= 8V
0.5
T_a = 150ºC
Pulsed
0
0
2
4
6
8
10
Drain - Source Voltage : V_DS [V]
Fig.7 T_j = 150°C Typical Output
Characteristics(II)
1.8
1.6
V_GS= 20V
V_GS= 18V
1.4
V_GS= 16V
1.2
V_GS= 14V
V_GS= 12V
1
V_GS= 10V
0.8
0.6
V_GS= 8V
0.4
0.2
T_a = 150ºC
Pulsed
0
0
1
2
3
4
5
Drain - Source Voltage : V_DS [V]
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2017.07 - Rev.B