SCT2H12NZ Datasheet, PDF (1/14 Pages) Rohm – N-channel SiC power MOSFET

SCT2H12NZ
N-channel SiC power MOSFET
Datasheet
V_DSS
R_DS(on) (Typ.)
I_D
P_D
1700V
1.15
3.7A
35W
Features
1) Low on-resistance
2) Fast switching speed
3) Long creepage distance
4) Simple to drive
5) Pb-free lead plating ; RoHS compliant
Application
• Auxilialy power supplies
• Switch mode power supplies
Outline
TO-3PFM
Inner circuit
(1) ^{(2) (3)}
(2)
(1) Gate
(2) Drain
*1
(3) Source
(1)
*1 Body Diode
(3)
Packaging specifications
Packaging
Tube
Reel size (mm)
-
Tape width (mm)
-
Type
Basic ordering unit (pcs)
30
Taping code
-
Marking
SCT2H12NZ
Absolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
T_c = 25°C
T_c = 100°C
Pulsed drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (T_surge ˂ 300nsec)
Power dissipation (T_c = 25°C)
Junction temperature
Range of storage temperature
Symbol
Value
Unit
V_DSS
1700
V
I_D ^*1
3.7
A
I_D ^*1
2.6
A
I_D,pulse ^*2
9.2
A
V_GSS
6 to 22
V
V_GSS-surge*3
10 to 26
V
P_D
35
W
T_j
175
°C
T_stg
55 to 175
°C
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2017.07 - Rev.B