SCT2H12NZ Datasheet, PDF (5/14 Pages) Rohm – N-channel SiC power MOSFET

SCT2H12NZ
Electrical characteristic curves
Datasheet
Fig.1 Power Dissipation Derating Curve
40
35
30
25
20
15
10
5
0
0
50
100
150
200
Junction Temperature : T_j [°C]
Fig.2 Maximum Safe Operating Area
100
Operation in this area
is limited by R_DS(on)
10
P_W = 100s
P_W = 1ms
P_W = 10ms
1
0.1
P_W = 100ms
T_a = 25ºC
Single Pulse
0.01
0.1
1
10 100
1000 10000
Drain - Source Voltage : V_DS [V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
10
1
0.1
1.E-04
1.E-03
1.E-02
T_a = 25ºC
Single Pulse
1.E-01 1.E+00 1.E+01
Pulse Width : P_W [s]
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/12
2017.07 - Rev.B