RV3C001ZP Datasheet, PDF (5/11 Pages) Rohm – Pch -20V -100mA Small Signal MOSFET

RV3C001ZP
lElectrical characteristic curves
Data Sheet
Fig.5 Breakdown Voltage
vs. Junction Temperature
50
V_GS = 0V
40
I_D = -1mA
Pulsed
30
20
10
0
-50
0
50
100
150
Junction Temperature : T_j [°C]
Fig.6 Typical Transfer Characteristics
1
V_DS= -10V
0.1
0.01
T_a=125ºC
T_a=75ºC
T_a=25ºC
T_a= -25ºC
0.001
0
0.5
1
1.5
2
2.5
Gate - Source Voltage : -V_GS [V]
Fig.7 Gate Threshold Voltage
vs. Junction Temperature
1.5
V_DS = -10V
I_D = -100mA
1.2 _Pulsed
0.9
0.6
0.3
0
-50
0
50
100
150
Junction Temperature : T_j [°C]
Fig.8 Transconductance vs. Drain Current
1
V_DS= -10V
0.1
T_a= -25ºC
T_a=25ºC
T_a=75ºC
T_a=125ºC
0.01
0.01
0.1
1
Drain Current : -I_D [A]
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2014.03 - Rev.A