RV3C001ZP Datasheet, PDF (1/11 Pages) Rohm – Pch -20V -100mA Small Signal MOSFET

RV3C001ZP
Pch -20V -100mA Small Signal MOSFET
TENTATIVE
Data Sheet
V_DSS
R_DS(on) (Max.)
I_D
P_D
-20V
3.8W
-100mA
100mW
lFeatures
1) Ultra Small Package (0.6×0.4×0.36mm)
2) Low voltage drive (-1.2V) makes this
device ideal for partable equipment.
3) Drive circuits can be simple.
4) Built-in ESD Protection Diode.
lApplication
Switching
lAbsolute maximum ratings(T_a = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
lOutline
VML0604
lInner circuit
(1) Gate
(2) Source
(3) Drain
*1 BODY DIODE
*2 ESD PROTECTION DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Taping
180
8
8,000
T2L
RX
Symbol
V_DSS
I_D ^*1
I_D,pulse ^*2
V_GSS
P_D ^*3
T_j
T_stg
Value
-20
100
400
10
100
150
-55 to +150
Unit
V
mA
mA
V
mW
°C
°C
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Symbol
R_thJA ^*3
Values
Unit
Min. Typ. Max.
-
-
1250 °C/W
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2014.03 - Rev.A