RV3C001ZP Datasheet, PDF (2/11 Pages) Rohm – Pch -20V -100mA Small Signal MOSFET

RV3C001ZP
Data Sheet
lElectrical characteristics(T_a = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V_(BR)DSS V_GS = 0V, I_D = -1mA
-20
-
-
V
Zero gate voltage drain current
I_DSS V_DS = -20V, V_GS = 0V
-
-
-1
mA
Gate - Source leakage current
I_GSS V_GS = 10V, V_DS = 0V
-
-
10 mA
Gate threshold voltage
V_{GS (th)} V_DS = -10V, I_D = -100mA _-0.3
-
-1
V
V_GS= -4.5V, I_D= -100mA
-
2.5
3.8
V_GS= -2.5V, I_D= -50mA -
3.4
5.1
Static drain - source
on - state resistance
R_DS(on) ^{*4 VGS= -1.8V, ID= -20mA}
-
V_GS= -1.5V, I_D= -10mA -
4.8
8.2
W
6.0 13.2
V_GS= -1.2V, I_D= -1mA -
10.0 40.0
Transconductance
V_GS= -4.5V, I_D= -100mA, T_j=125°C
-
3.3 6.6
g_fs ^*4 V_DS= -10V, I_D= -100mA 120
-
-
mS
*1 Limited only by maximum temperature allowed.
*2 Pw  10ms, Duty cycle  1%
*3 Each therminal mounted on a recommended land
*4 Pulsed
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2014.03 - Rev.A