RW1A013ZP Datasheet, PDF (4/5 Pages) Rohm – 1.5V Drive Pch MOSFET

RW1A013ZP
10
VGS=0V
Pulsed
1
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
600
Ta=25°C
Pulsed
500
400
ID= -0.6A
300
ID= -1.3A
200
100
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Data Sheet
1000
100
tf
td(off)
Ta=25°C
VDD= -6V
VGS= -4.5V
RG=10Ω
Pulsed
10
tr
td(on)
1
0.01
0.1
1
10
DRAIN-CURRENT : -ID[A]
Fig.12 Switching Characteristics
5
1000
4
3
2
Ta=25°C
VDD= -6V
ID= -1.3A
1
RG=10Ω
Pulsed
0
0 0.5 1 1.5 2 2.5 3
TOTAL GATE CHARGE : Qg [nC]
Fig.13 Dynamic Input Characteristics
zMeasurement circuits
100
Ciss
10
1
0.01
Coss
Crss
Ta=25°C
f=1MHz
VGS=0V
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
VGS
RG
ID
D.U.T.
VDS
RL
VDD
Fig.1-1 Switching time measurement circuit
Pulse width
VGS
10%
50%
90% ^50%
10%
10%
VDS
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching waveforms
VGS
IG(Const.)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.2-1 Gate charge measurement circuit
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate charge waveform
zNotice
This product might cause chip aging and breakdown under the large electrified environment .
Please consider to design ESD protection circuit.
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2009.06 - Rev.A