RW1A013ZP Datasheet, PDF (1/5 Pages) Rohm – 1.5V Drive Pch MOSFET

1.5V Drive Pch MOSFET
RW1A013ZP
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplication
Switching
zDimensions (Unit : mm)
WEMT6
(6) (5) (4)
(1) (2) (3)
Abbreviated symbol : XC
zInner circuit
(6)
(5)
(4)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RW1A013ZP
Taping
T2R
8000
∗2
∗1
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Drain
(2) Drain
(3) Gate
(3) _{(4) Source}
(5) Drain
(6) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
Limits
−12
±10
±1.3
±2.6
−0.5
−2.6
0.7
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
179
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C / W
www.rohm.com
1/4
○^c 2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A