RW1A013ZP Datasheet, PDF (2/5 Pages) Rohm – 1.5V Drive Pch MOSFET

RW1A013ZP
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 µA VGS=±10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −12 −
−
V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 µA VDS= −12V, VGS=0V
Gate threshold voltage
VGS (th) −0.3 − −1.0 V VDS= −6V, ID= −1mA
− 190 260 mΩ ID= −1.3A, VGS= −4.5V
Static drain-source on-state
resistance
∗
RDS (on)
−
−
280 390 mΩ ID= −0.6A, VGS= −2.5V
400 600 mΩ ID= −0.6A, VGS= −1.8V
Forward transfer admittance
−
Yfs ^∗ 1.4
530 1060 mΩ ID= −0.2A, VGS= −1.5V
−
−
S VDS= −6V, ID= −1.3A
Input capacitance
Ciss
− 290 −
pF VDS= −6V
Output capacitance
Coss
−
28
−
pF VGS=0V
Reverse transfer capacitance Crss
− 21 − pF f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td (on) ^∗ −
8
−
ns VDD −6V
tr ^∗ −
10
−
ns ^{ID= −0.6A}
td (off) ^∗ −
30
−
VGS= −4.5V
ns _{RL 10Ω}
tf ^∗ −
9
−
ns RG=10Ω
Total gate charge
Qg ^∗ −
2.4
−
nC VDD −6V RL 4.6Ω
Gate-source charge
Qgs ^∗ −
0.6
−
nC ID= −1.3A RG=10Ω
Gate-drain charge
Qgd ^∗ −
0.4
−
nC VGS= −4.5V
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VSD ^∗
−
− −1.2 V
∗Pulsed
Conditions
IS= −1.3A, VGS=0V
Data Sheet
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2009.06 - Rev.A