RHP020N06FRA Datasheet, PDF (4/7 Pages) Rohm – 4V Drive Nch MOSFET

RHP020N06 FRA
Data Sheet
0.6
Ta=25°C
0.5
Pulsed
0.4
I_D= 2.0A
0.3
0.2
0.1
I_D= 1.0A
0
0
5
10
15
GATE-SOURCE VOLTAGE : V_GS[V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
100
Ta=25°C
t_d(off)
t_f
V_DD= 30V
V_GS=10V
R_G=10ȍ
Pulsed
10
1
0.01
t_d(on)
t_r
0.1
1
10
DRAIN-CURRENT : I_D[A]
Fig.11 Switching Characteristics
9
8
7
6
5
4
Ta=25°C
3
V_DD= 30V
2
I_D= 2.0A
1
R_G=10ȍ
Pulsed
0
0123456
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
1000
Ciss
100
Crss
Ta=25°C
f=1MHz
V_GS=0V
10
0.01
0.1
Coss
1
10
100
DRAIN-SOURCE VOLTAGE : V_DS[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
100
10
Operation in this area is limited by R_DS(ON)
(V_GS= 10V)
100us
1ms
1
PW = 10ms
DC operation
0.1
0.01
0.001
Ta = 25°C
Single Pulse
MOUNTED ON SERAMIC BOARD
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : V_DS[V]
Fig.14 Maximum Safe Operating Aera
10
1
0.1
0.01
0.001
0.001
0.01
0.1
Ta = 25°C
Single Pulse
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 62.5 °C/W
<Mounted on a SERAMIC board>
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse W idth
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