RHP020N06FRA Datasheet, PDF (1/7 Pages) Rohm – 4V Drive Nch MOSFET

4V Drive Nch MOSFET
RHP020N06 FRA
AEC-Q101 Qualified
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) High speed switching.
3) Wide SOA.
zApplications
Switching
zPackaging specifications and hFE
Package
Type
Code
Basic ordering unit (pieces)
RHP020N06 FRA
Taping
T100
1000
zDimensions (Unit : mm)
MPT3
4.5
1.6
1.5
(1)Gate
(2)Drain
(3)Source
(1)
(2)
(3)
0.4
0.4
0.5
0.4
1.5 1.5
3.0
Abbreviated symbol : LR
zInner circuit
DRAIN
GATE
∗2
∗1
SOURCE
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25qC)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
Total power dissipation
PD
Channel temperature
Range of storage temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 When mounted on a 40+ 40+ 0.7mm ceramic board
Tch
Tstg
Limits
60
±20
±2
±8
2
8
500
2
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a 40+ 40+ 0.7mm ceramic board
Symbol
Rth(ch-a)
Limits
250
62.5
Unit
V
V
A
A
A
A
mW
W
∗2
°C
°C
Unit
°C/W
°C/W ^∗
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