RHP020N06FRA Datasheet, PDF (2/7 Pages) Rohm – 4V Drive Nch MOSFET

RHP020N06 FRA
zElectrical characteristics (Ta=25qC)
Parameter
Symbol Min.
Gate-source leakage
IGSS
−
Drain-source breakdown voltage V(BR) DSS 60
Zero gate voltage drain current IDSS
−
Gate threshold voltage
VGS (th) 1.0
−
Static drain-source on-state
resistance
RDS (on)^∗
−
−
Forward transfer admittance Yfs ^∗ 2.0
Input capacitance
Ciss
−
Output capacitance
Coss
−
Reverse transfer capacitance Crss
−
Turn-on delay time
td (on) ^∗ −
Rise time
tr ^∗ −
Turn-off delay time
td (off) ^∗ −
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
tf ^∗ −
Qg ^∗ −
Qgs ^∗ −
Qgd ^∗ −
∗Pulsed
Typ.
−
−
−
−
150
200
240
−
140
50
40
7
10
22
18
7
1
2
Max.
±10
−
1
2.5
200
280
340
−
−
−
−
−
−
−
−
14
−
−
Unit
Conditions
μA VGS= ±20V, VDS=0V
V ID= 1mA, VGS=0V
μA VDS= 60V, VGS=0V
V VDS= 10V, ID= 1mA
mΩ ID= 2A, VGS= 10V
mΩ ID= 2A, VGS= 4.5V
mΩ ID= 2A, VGS= 4V
S VDS= 10V, ID= 2A
pF VDS= 10V
pF VGS=0V
pF f=1MHz
ns VDD 30V
ns ^{ID= 1A}
VGS= 10V
ns _RL=30Ω
ns RG=10Ω
nC VDD 30V
nC VGS= 10V
nC ID= 2A
zBody diode characteristics (Source-drain) (Ta=25qC)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VSD
−
− 1.2 V
Conditions
IS= 2A, VGS=0V
Data Sheet
www.rohm.com
Ù¤^c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2₂0₀1₀6₉._.0₀6₃ -_-R_Re_ev_v.A_.A