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RB541XN Datasheet, PDF (4/5 Pages) Rohm – Schottky Barrier Diode
RB541XN
 
Data Sheet
0.06
0.05
D.C.
0.04
0.03
D=1/2
0.02
Sin(θ=180)
0.01
0
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
0.2
D.C.
0.15
D=1/2
0.1
Sin(θ=180)
0.05
0
0
25
50
75
100
125
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
0.2
D.C.
0.15
D=1/2
0.1
Sin(θ=180)
0.05
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
30
25
20
15
AVE:9.50kV
10
AVE:2.80kV
5
0
C=200pF
C=100pF
R=0Ω
R=1.5kΩ
ESD DISPERSION MAP
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2011.11 - Rev.A