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RB541XN Datasheet, PDF (3/5 Pages) Rohm – Schottky Barrier Diode
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RB541XN
20
1cyc
IFSM
15
8.3ms
10
AVE:3.90A
5
0
IFSM DISPERSION MAP
10
IFSM
8.3ms 8.3ms
1cyc
5
　
Data Sheet
14
Ta=25°C
12
AVE:13.0ns
IF=IR=100mA
Irr=0.1IR
10
8
6
4
2
0
trr DISPERSION MAP
10
IFSM
t
5
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
On glass-epoxy substrate
100
Rth(j-a)
Rth(j-c)
10
1
0.001 0.01 0.1
1
10
100 1000
TIME:(s)
Rth-t CHARACTERISTICS
0
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.1
D.C.
0.08
D=1/2
0.06
Sin(θ＝180)
0.04
0.02
0
0
0.05
0.1
0.15
0.2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pｆ CHARACTERISTICS
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2011.11 - Rev.A
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