RB541XN Datasheet, PDF (1/5 Pages) Rohm – Schottky Barrier Diode

Data Sheet
Schottky Barrier Diode
RB541XN
Applications
Rectify small power
Features
1)Small mold type. (UMD6)
2)Low V_F
3)High reliability
Construction
Silicon epitaxial planer
Dimensions (Unit : mm)
2.0±0.2
0.25±^0.1 E各acリhーleaドdとhaもs same dimension
0.05
同寸法
(6)
(5)
(4)
0.15± 0.05
Land size figure (Unit : mm)
0.65 0.65
(1)
(2)
0.65
0.65
1.3±0.1
0～0.1
(3)
0.7
0.9± 0.1
ROHM : UMD6
JEDEC : SOT-363
JEITA : SC-88
dot (year week factory)
0.35
UMD6
Structure
Taping dimensions (Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.1
　　　　　 0
0.3±0.1
2.2±0.1
4.0±0.1
φ1.1±0.1
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (DC)
V_R
Average rectified forward voltage (*1)
Io
Forward voltage surge peak (60Hz・1cyc) (*2)
Junction temperature
I_FSM
Tj
Storage temperature
Tstg
(*1) Rating of per diode:1/3Io
(*2) Rating of per diode
Limits
30
100
500
125
40 to 125
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Typ.
Max.
Forward voltage
V_F
-
-
0.35
Reverse current
I_R
-
-
10
*Rating of per diode
Unit
V
mA
mA
C
C
Unit
Conditions
V
I_F=10mA
μA
V_R=10V
1.15±0.1
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2011.11 - Rev.A