BD9745EKN Datasheet, PDF (4/22 Pages) Rohm – Silicon Monolithic Integrated Circuit

○Electrical characteristics（Ta=25℃，VBAT=3V, VCC=5V, RT=62kohm, STB1～7=3V）
Parameter
Spec.
Symbol
Units
Min
Typ.
Max.
Conditions
【 Output Circuit 】
CH1,2,3,4 Pch FET
ON Resistor
Ronlp
-
250
350 mΩ Hx=5V
CH1 Nch FET ON Resistor
Ron1n
-
80
120 mΩ PVCC=5V
CH2,3,4 Nch FET
ON Resistor
Ron2n
-
130
200 mΩ PVCC=5V
CH6,7 Load SW ON Resistor Ronl
-
250
350 mΩ HS6, 7H=5V
4/21
Test
Circuit
CH6 Nch FET ON Resistor
OUT5 High-level
Output Voltage ON Driving
OUT5 Low-level
Output Voltage ON Driving
OUT7 High-level
Output Voltage ON Driving
OUT7 Low-level
Output Voltage ON Driving
【 Step-up / down Selection 】
UDSEL12,
UDSEL3
Control Voltage
【ＳＴＢ1～7】
Step
down
Step
up
ON
STBControl Voltage
OFF
STB Pull-down Resistor
Ronh
VOUT5H
VOUT5H
VOUT7H
VOUT7H
VUDDO
VUDUP
VSTBH1
VSTBL1
RSTB1
-
PVCC5
-1.0
-
PVCC
-1.0
-
VBAT×
0.7
0
1.5
-0.3
250
450
PVCC5
-0.5
0.5
PVCC
-0.5
0.5
-
-
-
-
400
700 mΩ PVCC=5V
-
V
PVCC5=5V,IOUT5=50mA
NON5=0.2V
1.0
V
PVCC5=5V,IOUT5= - 50mA
NON5=-0.2V
-
V
PVCC=5V,IOUT7=50mA
INV7I=0V,INV7=0.4V
1.0
V
PVCC=5V,IOUT7= - 50mA
INV7I=0.6V,INV7=1.2V
VBAT V
VBAT
×0.3
V
5.5 V
0.3 V
700 KΩ
【 Circuit Current 】
VBAT
ISTB1
-
-
5 μA
VCC, PVCC ISTB2
-
Stand by
Current
Hx
ISTB3
-
-
5 μA
-
5
μA
Step-down
UDSEL1, 2,4=VBAT
Lx
ISTB4
-
-
5
μA
Step-up
UDSEL1, 2,4=0V
Start up Current
(VBAT Sink Current)
IST
-
300
1000 μA VBAT=1.5V
Circuit Current on Driving 1
(VBAT Sink Current)
Icc1
-
200
400 μA VBAT=3.0V
Circuit Current on Driving 2
（VCC,PVCC Sink Current）
Icc2
-
4.8
8.5
mA
STB1～7=3V
INV=2.5V
◎This product is not designed for normal operation within a radioactive environment.
REV. D