BC858BW_05 Datasheet, PDF (4/5 Pages) Rohm – PNP General Purpose Transistor

Transistors
BC858BW / BC858B
1000
Ta=25˚C
VCE=5V
100
10
0.5 1
10
100
500
COLLECTOR CURRENT : IC(mA)
Fig.15 Gain bandwidth product
vs. collector current
100
10
hie
Ta=25°C
VCE=6V
f=270Hz
hoe
hre
hre
hfe
1
IC=1mA
hie=8.75kΩ
hoe
hfe=270
hre=6.25×10-⁵
0.1
hoe=17.7µS
0.1
1
10
100
COLLECTOR CURRENT : IC(mA)
Fig.16 h parameter vs.
collector current
10n _VCB=30V
1n
100p
10p
1p
0.1p
0
25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta(°C)
Fig.17 Noise characteristics ( I )
10
Ta=25˚C
9
VCE=5V
8
IC=100µA
RS=10kΩ
7
6
5
4
3
2
1
0
10
100
1k
10k
100k
FREQUENCY : f(Hz)
Fig.18 Noise vs. collector current
100k
10k
Ta=25˚C
VCE=5V
f=10Hz
1k
100
0.01
0.1
1
10
COLLECTOR CURRENT : IC(mA)
Fig.19 Noise characteristics ( II )
100k
10k
NF=1dB
Ta=25˚C
VCE=5V
f=30Hz
100k
Ta=25˚C
VCE=5V
10k ^f=1kHz
NF=1dB
100k
Ta=25˚C
VCE=5V
f=10kHz
10k
NF=12dB
1k
1k
1k
100
0.01
0.1
1
10
COLLECTOR CURRENT : IC(mA)
Fig.20 Noise characteristics ( III )
100
0.01
0.1
1
10
COLLECTOR CURRENT : IC(mA)
Fig.21 Noise characteristics ( IV )
100
0.01
0.1
1
10
COLLECTOR CURRENT : IC(mA)
Fig. 22 Noise characteristics ( V )
Rev.A
4/4