BC858BW_05 Datasheet, PDF (1/5 Pages) Rohm – PNP General Purpose Transistor

Transistors
BC858BW / BC858B
PNP General Purpose Transistor
BC858BW / BC858B
zFeatures
1) BVCEO < -30V (IC=-1mA)
2) Complements the BC848B / BC848BW.
zPackage, marking and packaging specifications
Paet No.
Pakaging type
Marking
Code
Basic ordering unit (pieces)
BC858BW
UMT3
G3K
T106
3000
BC858B
SST3
G3K
T116
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗ When mounted on 7 × 5 × 0.6 mm ceramic board.
Limits
−30
−30
−5
−0.1
0.2
0.35
150
−65 to +150
Unit
V
V
V
A
W∗
˚C
˚C
zExternal dimensions (Unit : mm)
BC858BW
ROHM : UMT3
EIAJ : EC-70
2.0±0.2
1.3±0.1
0.65 0.65
(1) (2)
0.9±0.1
0.2 0.7±0.1
00.1
(3)
0.3+_{- 00.1}
0.15±0.05
All terminals have same dimensions
(1) Emitter
(2) Base
(3) Collector
BC858B
ROHM : SST3
2.9±0.2
1.9±0.2
0.95 0.95
0.95
+0.2
−0.1
0.45±0.1
(1)
(2)
(3)
0~0.1
0.2Min.
0.4+_{−00..015}
0.15_−^+00..016
All terminals have same dimensions
(1) Emitter
(2) Base
(3) Collector
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
VCE(sat)
VBE(on)
hFE
fT
Cob
Min.
−30
−30
−5
−
−
−
−
−0.6
210
−
−
Typ.
−
−
−
−
−
−
−
−
−
250
4.5
Max.
−
−
−
−100
4
−0.3
−0.65
−0.75
480
−
−
Unit
V
V
V
nA
µA
V
V
V
−
MHz
pF
Conditions
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −30V
VCB= −30V, Ta=150°C
IC/IB= −10mA/−0.5mA
IC/IB= −100mA/−5mA
VCE/IC= −5V/−10mA
VCE/IC= −5V/−2mA
VCE= −5V , IE=20mA , f=100MHz
VCB= −10V , IE=0 , f=1MHz
zElectrical characteristics curves
100
0.7
Ta=25˚C
0.5
0.6
80
0.4
60
0.3
40
0.2
20
0.1
0
IB=0mA
0
1.0
2.0
COLLECTOR-EMITTER VOLTAGE : VCE(V)
Fig.1 Grounded emitter output
characteristics ( I )
10.0
Ta=25˚C
50
8.0
45
40
35
6.0
30
25
4.0
20
15
2.0
10
5
0
1B=0µA
0
1.0
2.0
COLLECTOR-EMITTER VOLTAGE : VCE(V)
Fig.2 Grounded emitter output
characteristics ( II )
Rev.A
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