BC858BW_05 Datasheet, PDF (3/5 Pages) Rohm – PNP General Purpose Transistor

Transistors
BC858BW / BC858B
Ta=25˚C
IC / IB=10
0.3
0.2
0.1
0
0.1
1.0
10
100
COLLECTOR CURRENT : IC(mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current
1.8
Ta=25˚C
1.6
IC / IB=10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
1.0
10
100
COLLECTOR CURRENT : IC(mA)
Fig.7 Base-emitter saturation voltage
vs. collector current
1.8
Ta=25˚C
1.6
VCE=10V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
1.0
10
100
COLLECTOR CURRENT : IC(mA)
Fig.8 Grounded emitter propagation
characteristics
1000
Ta=25˚C
IC / IB=10
1000
15V
40V
100
100
VCC=3V
Ta=25˚C
VCC=40V
IC / IB=10
1000
15V
VCE=3V
100
Ta=25˚C
IC=10IB1=10IB2
40V
10
1.0
10
100
COLLECTOR CURRENT : IC(mA)
Fig.9 Turn-on time vs. collector current
10
1.0
10
100
COLLECTOR CURRENT : IC(mA)
Fig.10 Rise time vs. collector current
10
1.0
10
100
COLLECTOR CURRENT : IC(mA)
Fig.11 Storage time vs. collector current
1000
100
Ta=25˚C
VCC=40V
IC=10IB1=10IB2
100
Cib
10
Cob
Ta=25˚C
f=1MHz
10
1.0
10
100
COLLECTOR CURRENT : IC(mA)
Fig.12 Fall time vs. collector current
1
0.5 1
10
50
REVERSE BIAS VOLTAGE(V)
Fig.13 Input/output capacitance
vs. voltage
50
100MHz
200MHz
10
300MHz
Ta=25˚C
300MHz
200MHz _100MHz
1.0
0.5
0.5
1
10
100
500
COLLECTOR CURRENT : IC(mA)
Fig.14 Gain bandwidth product
Rev.A
3/4