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SH8M41TB1 Datasheet, PDF (3/9 Pages) Rohm – 4V Drive Nch + Pch MOSFET | |||
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SH8M41
ï¬ Electrical characteristics (Ta = 25ï°C)
<Tr2(Pch)>
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V (BR)DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
RDS
*
(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
l Yfs l*
Ciss
Coss
Crss
td(on)*
tr *
td(off)*
tf *
Qg *
Qgs *
Qgd *
Min.
-
ï80
ï1.0
-
-
-
2
-
-
-
-
-
-
-
-
-
-
ã
Typ.
-
-
-
-
165
220
230
-
1000
90
40
14
12
60
20
8.2
2.5
2.5
Max.
ï10
-
ï1
ï2.5
240
300
310
-
-
-
-
-
-
-
-
11.5
-
-
Unit
Conditions
ïA VGS=ï20V, VDS=0V
V ID=ï1mA, VGS=0V
ïA VDS=ï80V, VGS=0V
V VDS=ï10V, ID=ï1mA
ID=ï2.6A, VGS=ï10V
mï ID=ï1.3A, VGS=ï4.5V
ID=ï1.3A, VGS=ï4.0V
S ID=ï2.6A, VDS=ï10V
pF VDS=ï10V
pF VGS=0V
pF f=1MHz
ns ID=ï1.3A, VDD ï40V
ns VGS=ï10V
ns RL=31ï
ns RG=10ï
nC ID=ï2.6A
nC VDD ï40V
nC VGS= ï5V
Data Sheet
ï¬Body diode characteristics (Source-Drain) (Ta = 25ï°C)
Parameter
Forward Voltage
Symbol Min.
VSD *
-
Typ.
-
*Pulsed
Max. Unit
Conditions
ï1.2 V Is=ï1.6A, VGS=0V
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3/8
2010.07 - Rev.A
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