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| SH8M41TB1 Datasheet, PDF (2/9 Pages) Rohm – 4V Drive Nch + Pch MOSFET | |||
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SH8M41
ï¬ Electrical characteristics (Ta = 25ï°C)
<Tr1(Nch)>
Parameter
Symbol Min.
Gate-source leakage
IGSS
-
Drain-source breakdown voltage V (BR)DSS 80
Zero gate voltage drain current
IDSS
-
Gate threshold voltage
VGS (th)
1.0
Static drain-source on-state
resistance
-
RDS
*
(on)
-
-
Forward transfer admittance
l Yfs l*
3
Input capacitance
Ciss
-
Output capacitance
Coss
-
Reverse transfer capacitance
Crss
-
Turn-on delay time
td(on)*
-
Rise time
tr *
-
Turn-off delay time
td(off)*
-
Fall time
tf *
-
Total gate charge
Qg *
-
Gate-source charge
Qgs *
-
Gate-drain charge
Qgd *
-
*Pulsed
ã
Typ.
-
-
-
-
90
110
120
-
600
100
40
12
15
40
12
6.6
1.8
2.2
Max.
10
-
1
2.5
130
150
160
-
-
-
-
-
-
-
-
9.2
-
-
Unit
Conditions
ïA VGS=20V, VDS=0V
V ID=1mA, VGS=0V
ïA VDS=80V, VGS=0V
V VDS=10V, ID=1mA
ID=3.4A, VGS=10V
mï ID=3.4A, VGS=4.5V
ID=3.4A, VGS=4.0V
S VDS=10V, ID=3.4A
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=1.7A, VDD 40V
ns VGS=10V
ns RL=24ï
ns RG=10ï
nC ID=3.4A
nC VDD 40V
nC VGS=5V
ï¬Body diode characteristics (Source-Drain) (Ta = 25ï°C)
Parameter
Forward Voltage
Symbol Min.
VSD *
-
Typ.
-
*Pulsed
Max. Unit
Conditions
1.2
V Is=6.4A, VGS=0V
Data Sheet
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
2/8
2010.07 - Rev.A
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