SH8M41TB1 Datasheet, PDF (1/9 Pages) Rohm – 4V Drive Nch + Pch MOSFET

4V Drive Nch + Pch MOSFET
SH8M41
 Structure
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
 Dimensions (Unit : mm)
SOP8
(8) (7)
(6)
(2)
(3)
 Application
Switching
 Packaging specifications
 Inner circuit
Package
Taping
(8)
(7) (6)
(5)
Type Code
TB
Basic ordering unit (pieces) 2500
SH8M41

 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Tr1 : N-ch Tr2 : P-ch
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗2
∗2
∗1
∗1
(1)
(2) (3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
V_DSS
V_GSS
I_D
I_DP ^*1
I_s
I_sp ^*1
P_D ^*2
Tch
80
80
20
20
3.4
2.6
13.6 10.4
1.6
1.6
13.6
10.4
2
150
V
V
A
A
A
A
W / TOTAL
C
Range of storage temperature
Tstg
55 to +150
C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol Limits
Rth (ch-a)^* 62.5
Unit
C / W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/8
2010.07 - Rev.A