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SH8K32 Datasheet, PDF (3/5 Pages) Rohm – 4V Drive Nch+Nch MOSFET
SH8K32
Electrical characteristic curves
100
10
1
Ta=125°C
Ta=75°C
Ta=25°C
0.1
Ta= −25°C
VDS=10V
Pulsed
0.01
0.001
0.0001
0.00001
0.5
1.0
1.5
2.0
2.5
3.0
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Typical Transfer Characteristics
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
VGS=4.5V
Pulsed
10
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.4 Static Drain-Source
On-State Resistance
vs. Drain Current(ΙΙΙ)
300
Ta=25°C
Pulsed
ID=4.5A
200
ID=2.25A
100
0
0 1 2 3 4 5 6 7 8 9 10
GATE-SOURCE VOLTAGE : VGS (V)
Fig.7 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
1000
VGS=4.0V
VGS=4.5V
VGS=10V
100
Ta=25°C
Pulsed
10
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.2 Static Drain-Source
On-State Resistance
vs. Drain Current(Ι)
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
VGS=4V
Pulsed
10
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.5 Static Drain-Source
On-State Resistance
vs. Drain Current(IV)
10000
1000
tf
td (off)
100
Ta=25°C
VDD=30V
VGS=10V
RG=10Ω
Pulsed
10 td (on)
tr
1
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.8 Switching Characteristics
Data Sheet
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
VGS=10V
Pulsed
10
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.3 Static Drain-Source
On-State Resistance
vs. Drain Current(ΙΙ)
10
Ta=125°C
Ta=75°C
Ta=25°C
1 Ta= −25°C
VGS=0V
Pulsed
0.1
0.01
0
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
10
Ta=25°C
9 VDD=30V
8
ID=4.5A
RG=10Ω
7 Pulsed
6
5
4
3
2
1
0
0
2
4
6
8 10 12
TOTAL GATE CHARGE : Qg (nC)
Fig.9 Dynamic Input Characteristics
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2009.12 - Rev.A