SH8K32 Datasheet, PDF (2/5 Pages) Rohm – 4V Drive Nch+Nch MOSFET

SH8K32
Electrical characteristics (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 μA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 60
−
Zero gate voltage drain current IDSS
−
−
−
V ID= 1mA, VGS=0V
1
μA VDS= 60V, VGS=0V
Gate threshold voltage
VGS (th) 1.0
−
2.5
V VDS= 10V, ID= 1mA
−
Static drain-source on-state
resistance
RDS (on)^∗
−
−
46 65 mΩ ID= 4.5A, VGS= 10V
52 73 mΩ ID= 4.5A, VGS= 4.5V
55 77 mΩ ID= 4.5A, VGS= 4.0V
Forward transfer admittance Yfs ^∗ 4.0 −
−
S VDS= 10V, ID= 4.5A
Input capacitance
Ciss
− 500 −
pF VDS= 10V
Output capacitance
Coss
− 120 −
pF VGS=0V
Reverse transfer capacitance Crss
−
Turn-on delay time
td (on) ^∗ −
Rise time
tr ^∗ −
Turn-off delay time
td (off) ^∗ −
Fall time
Total gate charge
tf ^∗ −
Qg ^∗ −
Gate-source charge
Qgs ^∗ −
Gate-drain charge
Qgd ^∗ −
∗Pulsed
55 − pF f=1MHz
12
−
ns VDD 30V
18
−
ns ^{ID= 2.3A}
VGS= 10V
40
−
ns _{RL= 13Ω}
13
−
ns RG=10Ω
7.0 10 nC VDD 30V, VGS= 5V
1.6 − nC ID= 4.5A
2.5 − nC RL= 6.7Ω, RG= 10Ω
Body diode characteristics (Source-Drain) (Ta=25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
∗Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD^∗
−
−
1.2
V IS=4.5A, VGS=0V
Data Sheet
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2009.12 - Rev.A