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SH8K32 Datasheet, PDF (1/5 Pages) Rohm – 4V Drive Nch+Nch MOSFET | |||
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4V Drive Nch+Nch MOSFET
SH8K32
ï¬Structure
Silicon N-channel MOSFET
ï¬Features
1) Built-in G-S Protection Diode.
2) Small surface Mount Package (SOP8).
ï¬Application
Switching
ï¬Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
ï¬Packaging specifications
Type
SH8K32
Package
Code
Basic ordering unit (pieces)
Taping
TB
2500
ï¬Absolute maximum ratings (Ta=25ï°C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
â1 Pw 10μs, Duty cycle 1%
â2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP â1
IS
ISP â1
PD â2
Tch
Tstg
Limits
60
±20
±4.5
±18
1.0
18
2.0
150
â55 to +150
Unit
V
V
A
A
A
A
W/TOTAL
°C
°C
ï¬Inner circuit
(8) (7)
(6) (5) (8) (7) (6) (5)
â2
â2
(1) (2) (3) (4)
â1
â1
(1) (2)
(3) (4)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
âA protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
www.rohm.com
1/4
âc 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
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