RHP030N03_0610 Datasheet, PDF (3/4 Pages) Rohm – 4V Drive Nch MOSFET

Transistors
zElectrical characteristics curves
1000
Ta=25°C
1000
f=1MHz
VGS=0V
Ciss
100
100
Coss
Crss
10
10
RHP030N03
Ta=25°C
VDD= 15V
VGS= 10V
RG=10Ω
Pulsed
tf
td (off)
td (on)
tr
10
VDS=10V
Pulsed
Ta=125°C
75°C
1
25°C
−25°C
0.1
1
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
1
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.2 Switching Characteristics
0.01
0 0.5 1 1.5 2 2.5 3 3.5
GATE-SOURCE VOLTAGE : VGS (V)
Fig.3 Typical Transfer Characteristics
0.5
0.4
0.3
1.5A
0.2
ID=3.0A
Ta=25°C
Pulsed
0.1
0
0 2 4 6 8 10 12 14
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
10
1
Ta=125°C
Ta=75°C
0.1
Ta=25°C
Ta= −25°C
0.01
VGS=0V
Pulsed
10
1
VGS=10V
0.1
0.01
Ta=25°C
Pulsed
0V
0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.5 Reverse Drain Current vs.
Source-Drain Voltage ( Ι )
0.001
0 0.2 0.4 0.6 0.8
1 1.2
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage ( ΙΙ )
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
1
VGS=10V
Pulsed
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
VGS=4V
Pulsed
0.01
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
0.01
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
2.5
VSD=10V
ID=1mA
Pulsed
2
1.5
1
0.5
0
-50 -25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.9 Gate Threshold Voltage vs.
Channel Temperature
Rev.A
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