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RHP030N03_0610 Datasheet, PDF (2/4 Pages) Rohm – 4V Drive Nch MOSFET | |||
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Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Gate-source leakage
IGSS
â
Drain-source breakdown voltage V(BR) DSS 30
Zero gate voltage drain current IDSS
â
Gate threshold voltage
VGS (th) 1.0
Static drain-source on-state
resistance
RDS (on)â
â
â
Forward transfer admittance Yfs â 2.0
Input capacitance
Ciss
â
Output capacitance
Coss
â
Reverse transfer capacitance Crss
â
Turn-on delay time
td (on) â â
Rise time
tr â â
Turn-off delay time
td (off) â â
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
âPulsed
tf â â
Qg â â
Qgs â â
Qgd â â
Typ.
â
â
â
â
90
160
â
160
90
27
7
11
15
4.5
6.5
1.0
1.5
Max.
±10
â
1
2.5
120
210
â
â
â
â
â
â
â
â
â
â
â
Unit
Conditions
µA VGS=±20V, VDS=0V
V ID= 1mA, VGS=0V
µA VDS= 30V, VGS=0V
V VDS= 10V, ID= 1mA
m⦠ID= 3A, VGS= 10V
m⦠ID= 3A, VGS= 4V
S VDS= 10V, ID= 3A
pF VDS= 10V
pF VGS=0V
pF f=1MHz
ns VDD 15V
ns ID= 1.5A
VGS= 10V
ns RL=10â¦
ns RG=10â¦
nC VDD 15V
nC VGS= 10V
nC ID= 3A
RHP030N03
Rev.A
2/3
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