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RHP030N03_0610 Datasheet, PDF (1/4 Pages) Rohm – 4V Drive Nch MOSFET
Transistors
4V Drive Nch MOSFET
RHP030N03
RHP030N03
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance.
2) 4V drive.
zApplications
Switching
zDimensions (Unit : mm)
MPT3
4.5
1.6
1.5
(1)Gate
(2)Drain
(3)Source
(1)
(2)
(3)
0.4
0.4
0.5
0.4
1.5 1.5
3.0
Abbreviated symbol : KZ
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RHP030N03
Taping
T100
1000
zInner circuit
(3)
(2)
∗2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain current
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ∗1
IDR
IDRP ∗1
Total power dissipation
PD
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a 40×40×0.7mm ceramic board
Tch
Tstg
Limits
30
±20
3
10
3
10
500
2 ∗2
150
−55 to +150
∗1
∗1 ESD PROTECTION DIODE (1)
∗2 BODY DIODE
(1) Source
(2) Gate
(3) Drain
Unit
V
V
A
A
A
A
mW
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a 40×40×0.7mm ceramic board
Symbol
Rth(ch-a)
Limits
250
62.5 ∗
Unit
°C/W
°C/W
Rev.A
1/3