RF501B2S_11 Datasheet, PDF (3/4 Pages) Rohm – Fast Recovery Diode

RF501B2S
　
Data Sheet
1000
100
Ifsm
t
10
1
10
100
TIME : t(ms)
I_FSM-t CHARACTERISTICS
10
DC
8
D=1/2
6
0A
Io
0V
t
VR
D=t/T
V_R=100V
T _{Tj=150C}
4
Sin(180)
2
0
0
25
50
75 100 125 150
AMBIENT TEMPERATURE : Ta(C)
Derating Curveﾞ(Io-Ta)
100
Mounted on epoxy board
Rth(j-a)
10
Rth(j-c)
1
IM=100mA
I_F=1A
0.1
0.001
1ms tim
300us
0.01 0.1
1
10 100
TIME : t(s)
Rth-t CHARACTERISTICS
1000
10
DC
8
D=1/2
6
0A
Io
0V
t
V_R
D=t/T
VR=100V
T Tj=150C
4
Sin(180)
2
0
0
25
50
75 100 125 150
CASE TEMPARATURE : Tc(C)
Derating Curveﾞ(Io-Tc)
10
8
DC
D=1/2
6
Sin(180)
4
2
0
0
2
4
6
8
10
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
30
No break at 30kV
25
No break at 30kV
20
15
10
5
0
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
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2011.05 - Rev.G