RF501B2S_11 Datasheet, PDF (2/4 Pages) Rohm – Fast Recovery Diode

RF501B2S
　
Electrical characteristic curves
10
Ta=150C
1
Ta=125C
0.1
Ta=75C
0.01
Ta=25C
Ta=-25C
0.001
0 100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE : V_F(mV)
V_F-I_F CHARACTERISTICS
890
Ta=25C
I_F=5A
880
n=30pcs\
870
860
850
AVE:856.6mV
840
V_F DISPERSION MAP
10000
1000
100
10
1
0.1
0
Ta=150C _{Ta=125C}
Ta=75C
Ta=25C
Ta=-25C
50
100
150
200
REVERSE VOLTAGE : V_R(V)
V_R-I_R CHARACTERISTICS
100
90
Ta=25C
V_R=200V
80
n=30pcs
70
60
50
40
30
AVE : 10.7nA
20
10
0
I_R DISPERSION MAP
300
250
Ifsm
1cyc
200
8.3ms
150
AVE : 88.0A
100
50
0
IFSM DISPERSION MAP
30
Ta=25C
25
I_F=0.5A
IR=1A
Irr=0.25*I_R
20
n=10pcs
15
10
AVE : 14.5ns
5
0
trr DISPERSION MAP
Data Sheet
1000
100
f=1MHz
10
1
0
10
20
30
REVERSE VOLTAGE : V_R(V)
V_R-Ct CHARACTERISTICS
200
Ta=25C
f=1MHz
190
V_R=0V
n=10pcs
180
170
AVE : 74.9pF
160
150
Ct DISPERSION MAP
1000
100
Ifsm
8.3ms 8.3ms
1cyc
10
1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
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2011.05 - Rev.G