RF501B2S_11 Datasheet, PDF (1/4 Pages) Rohm – Fast Recovery Diode

Fast Recovery Diode
RF501B2S
Applications
General rectification
Dimensions（Unit : mm ）
Features
1) Power mold type.(CPD)
2) High reliability
3) Low V_F
4) Very fast recovery
5) Low switching loss
Construction
Silicon epitaxial planar
Taping specifications(Unit : mm)
Data Sheet
Land size figure(Unit : mm)
6.0
1.6 1.6
CPD
2.3 2.3
Structure
(2)
(1) (3)
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
200
V
Reverse voltage (DC)
V_R
200
V
Average rectified forward current (*1)
Io
5
A
Forward current surge peak (60Hz / 1cyc)(*1)
I_FSM
40
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to 150
°C
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=128C
Electrical characteristics(Ta=25C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Symbol
V_F
I_R
trr
Min. Typ. Max.
-
0.86 0.92
-
0.015 1
-
15
30
Unit
Conditions
V
I_F=5A
μA
V_R=200V
ns
I_F=0.5A,I_R=1A,Irr=0.25*I_R
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2011.05 - Rev.G